DocumentCode
1336451
Title
Gain Recovery Acceleration by Enhancing Differential Gain in Quantum Well Semiconductor Optical Amplifiers
Author
Qin, Cui ; Huang, Xi ; Zhang, Xinliang
Author_Institution
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
47
Issue
11
fYear
2011
Firstpage
1443
Lastpage
1450
Abstract
It is demonstrated theoretically that the quantum well (QW) semiconductor optical amplifiers (SOAs) with high differential gain will show fast gain recovery dynamic characteristics. Based on the calculation of energy band structure, the effects of compressive strain and p-type modulation doping on the gain, the differential gain, and linewidth enhancement factor (a-factor) are investigated. The peak of the differential gain spectrum shifts to longer wavelength, and the peak value is significantly enhanced by increasing compressive strain. Meanwhile the gain is obviously increased by increasing the p-type modulation doping concentration. By comparing the gain and phase recovery dynamics in three different types of SOA samples, it is shown that the QW SOA with highest differential gain has the shortest gain recovery time among the three samples.
Keywords
high-speed optical techniques; optical modulation; quantum well lasers; semiconductor doping; semiconductor optical amplifiers; spectral line shift; compressive strain; differential gain spectrum shifts; gain recovery acceleration; gain recovery time; linewidth enhancement factor; p-type modulation doping; quantum well semiconductor optical amplifiers; Charge carrier density; Equations; Mathematical model; Optical variables control; Quantum well devices; Semiconductor optical amplifiers; Strain; Doping; quantum wells; semiconductor optical amplifiers; strain;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2011.2170190
Filename
6031893
Link To Document