Analysis of distributed feedback semiconductor lasers by two-dimensional theory

Author

Hori, Yoshikazu ; Sato, Hisanao

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

26

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

655

Lastpage

662

Abstract

The two-dimensional theory of distributed feedback (DFB) lasers to take account of the planar waveguide structure which was presented in a previous paper (see ibid., vol.26, no.3, p.467-72, 1990) is applied to the analysis of the DFB laser threshold conditions with respect to the effects of the waveguide structure and the facet reflection. The asymmetric properties of the transverse functions of the coupled modes with respect to the Bragg frequency in the dispersion relations are found to be enhanced by the asymmetric index waveguide structure and by the asymmetric facet reflectivity. Therefore, the resulting confinement factor differences in the grating layer between the two adjacent lasing modes on both sides of the Bragg frequency give large threshold gain differences

Keywords

distributed feedback lasers; laser modes; laser theory; semiconductor junction lasers; Bragg frequency; adjacent lasing modes; asymmetric facet reflectivity; asymmetric index waveguide structure; asymmetric properties; confinement factor differences; coupled modes; dispersion relations; distributed feedback semiconductor lasers; facet reflection; grating layer; planar waveguide structure; threshold gain; transverse functions; two-dimensional theory; Distributed feedback devices; Frequency; Laser feedback; Laser modes; Laser theory; Planar waveguides; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers; Waveguide theory;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.53381

Filename

53381