A novel high-voltage sustaining structure with buried oppositely doped regions

Author

Chen, Xing Bi ; Wang, Xin ; Sin, Johnny K O

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

47

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1280

Lastpage

1285

Abstract

A novel high-voltage sustaining structure with buried oppositely doped regions is demonstrated. Due to the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar conduction) can be reduced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimensional (2-D) simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than the value given by the conventional “silicon limit”

Keywords

buried layers; compensation; doping profiles; power MOSFET; semiconductor device breakdown; semiconductor device models; 2D simulation; 500 V; HV sustaining structure; VD-MOST; breakdown voltage; buried oppositely doped regions; drift region; edge termination; electric field compensation; high-voltage sustaining structure; layer resistivity; layer thickness; on-resistance reduction; unipolar conduction; vertical double-diffused MOS structure; Analytical models; Bismuth; Breakdown voltage; Conductivity; Doping; Engine cylinders; Power transistors; Silicon compounds; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.842974

Filename

842974