A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling

Author

Lim, K.Y. ; Zhou, X.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

47

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1300

Lastpage

1302

Abstract

A physically-based series resistance model for deep-submicron MOSFET is presented, which includes a bias-dependent (intrinsic) component and a bias-independent (extrinsic) component. The model is semi-empirical and consists of two physics-based fitting parameters to be extracted with a single measurement, which can be extended to all gate-length and bias conditions. The model can be applied to drain-current prediction and optimization due to process fluctuations such as LDD junction depth and spacer thickness

Keywords

MOSFET; electric resistance; semiconductor device models; I-V modeling; LDD junction depth; bias conditions; bias-dependent component; bias-independent component; deep-submicron MOSFET; drain-current prediction; fitting parameters; gate-length conditions; physically-based semi-empirical series resistance model; process fluctuations; spacer thickness; Current measurement; Data mining; Electrical resistance measurement; Fluctuations; MOSFET circuits; Numerical models; Predictive models; Space technology; Threshold voltage; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.842978

Filename

842978