A novel photodetector using MOS tunneling structures

Author

Liu, C.W. ; Liu, W.T. ; Lee, M.H. ; Kuo, W.S. ; Hsu, B.-C.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

21

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

307

Lastpage

309

Abstract

A metal/oxide/p-Si structure with ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carriers in the inversion layer. The high growth temperature (1000/spl deg/C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm/sup 2/. As biased in the inversion layer, the tunneling diode works in the deep depletion region with soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

Keywords

MIS devices; inversion layers; minority carriers; oxidation; photodetectors; photodiodes; rapid thermal processing; tunnel diodes; 2.3 nm; 900 to 1000 C; Al-SiO/sub 2/-Si; MOS tunneling structures; NMOS tunneling structure; dark current; deep depletion region; high growth temperature; inversion layer; metal/oxide/p-Si structure; minority carrier thermal generation; oxide voltage soft pinning; photodetector; positive gate bias; rapid thermal oxidation; tunneling diode; ultrathin oxide; Dark current; Detectors; Electrodes; Indium tin oxide; MOS devices; Photoconductivity; Photodetectors; Semiconductor diodes; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.843159

Filename

843159