Low-Frequency Noise in Poly-Si TFT SONOS Memory With a Trigate Nanowire Structure

Author

Hu, Hsin-Hui ; Jheng, Yong-Ren ; Wu, Yung-Chun ; Hung, Min-Feng ; Huang, Guo-Wei

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

Volume

32

Issue

12

fYear

2011

Firstpage

1698

Lastpage

1700

Abstract

Low-frequency noise (LFN) in silicon-oxide-nitride-oxide-silicon (SONOS)-type memory that is based on trigate polycrystalline silicon thin-film transistors (TFTs) with a multiple nanowire (NW) channel structure was investigated. The flicker noise level in a multiple NW channel structure was lower than that in a standard single-channel device. The observation could be explained by the fewer grain boundaries in the nanoscale multiple channels, comparable to the grain size, and consequently lowers the impact of LFN in a SONOS-TFT.

Keywords

elemental semiconductors; field effect transistors; flicker noise; grain boundaries; nanowires; random-access storage; silicon; thin film transistors; LFN; NW channel structure; Si; TFT SONOS memory; flicker noise level; grain boundaries; low-frequency noise; nanoscale multiple channels; silicon-oxide-nitride-oxide-silicon-type memory; trigate nanowire structure; trigate polycrystalline silicon thin-film transistors; Grain boundaries; Logic gates; Low-frequency noise; Nanoscale devices; Silicon; Transistors; Low-frequency noise (LFN); nanowire (NW); polycrystalline silicon thin-film transistors (poly-Si TFTs); silicon–oxide–nitride–oxide–silicon (SONOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2167124

Filename

6034511