Single Particle Displacement Damage in Silicon

Single particle displacement damage events are reported in silicon diodes irradiated with ²⁵²Cf and ²⁴¹Am. In situ measurements of reverse current show the result of displacement damage incurred from individual fission fragments in ²⁵²Cf irradiated diodes. Discrete increases in reverse current exceeding 20 fA are measured. The increases are temporally correlated with fission fragment-induced ionization events. The ratio of the damage factor associated with fission fragments to the damage factor associated with alpha particles is in good agreement with the ratio of non-ionizing energy loss calculated for fission fragments to NIEL calculated for alpha particles.