• DocumentCode
    1339557
  • Title

    Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

  • Author

    Ferlet-Cavrois, Véronique ; Binois, Christian ; Carvalho, Aminata ; Ikeda, Naomi ; Inoue, Masanori ; Eisener, Bernd ; Gamerith, Stefan ; Chaumont, Géraldine ; Pintacuda, Francesco ; Javanainen, Arto ; Schwank, James R. ; Shaneyfelt, Marty R. ; Lauenstein,

  • Author_Institution
    ESTEC, Eur. Space Agency, ESA, Noordwijk, Netherlands
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    2920
  • Lastpage
    2929
  • Abstract
    A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
  • Keywords
    MOSFET; radiation effects; destructive events; failure rate calculations; gate oxide rupture; heavy-ion induced gate rupture; power MOSFET; radiation hardness assurance; Capacitors; Dielectric breakdown; Power MOSFET; Radiation effects; Radiation hardening; Space technology; Statistical analysis; Heavy ions; power MOSFETs; radiation hardness assurance; single event gate rupture; time dependant dielectric breakdown;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2223761
  • Filename
    6361433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1339557