• DocumentCode
    1339560
  • Title

    GaN Comes of Age

  • Author

    Katz, Allen ; Franco, Marc

  • Author_Institution
    Linearizer Technol., Inc., Hamilton, NJ, USA
  • Volume
    11
  • Issue
    7
  • fYear
    2010
  • Abstract
    GaN is now providing solid-state power amplifiers of higher efficiency, bandwidth, and power density than could be achieved only a few years ago. Novel circuit topologies combined with GaN´s high-voltage capabilities and linearization are allowing GaN high-power amplifiers to simultaneously achieve both linearity and record high efficiency. GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%. Narrower-band high-power amplifiers have been produced with PAEs of more than 90%.
  • Keywords
    III-V semiconductors; gallium compounds; microwave power amplifiers; network topology; GaN; circuit topology; high-power amplifier; high-voltage capability; multioctave bandwidth; power density; solid-state power amplifier;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/MMM.2010.938583
  • Filename
    5590355