DocumentCode
1339560
Title
GaN Comes of Age
Author
Katz, Allen ; Franco, Marc
Author_Institution
Linearizer Technol., Inc., Hamilton, NJ, USA
Volume
11
Issue
7
fYear
2010
Abstract
GaN is now providing solid-state power amplifiers of higher efficiency, bandwidth, and power density than could be achieved only a few years ago. Novel circuit topologies combined with GaN´s high-voltage capabilities and linearization are allowing GaN high-power amplifiers to simultaneously achieve both linearity and record high efficiency. GaN high-power amplifiers have been produced with more than 100 W of power over multioctave bandwidths and with PAEs of more than 60%. Narrower-band high-power amplifiers have been produced with PAEs of more than 90%.
Keywords
III-V semiconductors; gallium compounds; microwave power amplifiers; network topology; GaN; circuit topology; high-power amplifier; high-voltage capability; multioctave bandwidth; power density; solid-state power amplifier;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2010.938583
Filename
5590355
Link To Document