• DocumentCode
    1339768
  • Title

    Improved frequency tripler with integrated single-barrier varactor

  • Author

    Meola, R. ; Freyer, J. ; Claassen, M.

  • Author_Institution
    Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany
  • Volume
    36
  • Issue
    9
  • fYear
    2000
  • fDate
    4/27/2000 12:00:00 AM
  • Firstpage
    803
  • Lastpage
    804
  • Abstract
    A monolithically integrated frequency tripler on semi-insulating GaAs substrate with a 210 GHz output frequency is presented. The measured conversion efficiency using a GaAs-GaAlAs single-barrier varactor is 13.5%, with an output power of >10 mW
  • Keywords
    III-V semiconductors; MIMIC; aluminium compounds; frequency multipliers; gallium arsenide; impedance matching; microstrip circuits; millimetre wave diodes; millimetre wave frequency convertors; varactors; 10 mW; 13.5 percent; 210 GHz; 70 GHz; EHF; GaAs-GaAlAs; GaAs-GaAlAs varactor; MM-wave IC; conversion efficiency; frequency tripler; integrated single-barrier varactor; monolithically integrated frequency tripler; semi-insulating GaAs substrate; waveguide mount;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000618
  • Filename
    843782