DocumentCode
1340405
Title
Capacitor-less low-dropout regulator with slew-rate-enhanced circuit
Author
Tsai, C.H. ; Wang, Jessie Hui
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
5
Issue
5
fYear
2011
fDate
9/1/2011 12:00:00 AM
Firstpage
384
Lastpage
391
Abstract
A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 A at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.
Keywords
capacitors; comparators (circuits); power transistors; SRE circuit; auxiliary power transistor control; capacitor-less low-power LDR; capacitor-less low-power low-dropout regulator; comparator; current 0.1 mA to 100 mA; current 18 muA; gate capacitor; load current; power consumption; slew-rate-enhanced circuit; voltage 675 mV to 300 mV;
fLanguage
English
Journal_Title
Circuits, Devices & Systems, IET
Publisher
iet
ISSN
1751-858X
Type
jour
DOI
10.1049/iet-cds.2010.0309
Filename
6034867
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