• DocumentCode
    1340405
  • Title

    Capacitor-less low-dropout regulator with slew-rate-enhanced circuit

  • Author

    Tsai, C.H. ; Wang, Jessie Hui

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    5
  • Issue
    5
  • fYear
    2011
  • fDate
    9/1/2011 12:00:00 AM
  • Firstpage
    384
  • Lastpage
    391
  • Abstract
    A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 A at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.
  • Keywords
    capacitors; comparators (circuits); power transistors; SRE circuit; auxiliary power transistor control; capacitor-less low-power LDR; capacitor-less low-power low-dropout regulator; comparator; current 0.1 mA to 100 mA; current 18 muA; gate capacitor; load current; power consumption; slew-rate-enhanced circuit; voltage 675 mV to 300 mV;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2010.0309
  • Filename
    6034867