Evaluation of plasma charging damage in ultrathin gate oxides

Author

Lin, Horng-Chih ; Chen, Chi-Chun ; Chien, Chao-Hsing ; Hsein, Szu-Kang ; Wang, Meng-Fan ; Chao, Tien-Sheng ; Huang, Tiao-Yuan ; Chang, Chun-Yen

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

19

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

68

Lastpage

70

Abstract

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 mm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

Keywords

MOSFET; electric breakdown; plasma applications; semiconductor device reliability; semiconductor device testing; MOSFETs; charge-to-breakdown measurement; dielectric breakdown; plasma charging damage; plasma materials processing; semiconductor device reliability; subthreshold swing; threshold voltage; transconductance; ultrathin gate oxides; Chaos; Current measurement; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Threshold voltage; Transconductance; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.661167

Filename

661167