Electrical conductivity characteristics of tin-doped Zinc Oxide thin film deposited using sol-gel immersion method

Author

Shafura, A.K. ; Md Sin, N.D. ; Azhar, N.E.A. ; Saurdi, I. ; Mamat, M.H. ; Uzer, M. ; Rusop, M.

Author_Institution

NANO-EleTronic Centre, Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2014

fDate

27-29 May 2014

Firstpage

86

Lastpage

89

Abstract

Tin-doped Zinc Oxide (Sn-doped ZnO) thin film has been deposited onto glass substrates using sol-gel immersion method. These thin films are grown at different doping concentrations. The electrical and structural characterizations of the undoped and doped films were carried out using current-voltage (IV) measurement and field emission scanning electron microscopy (FESEM). From this study, it is known that, electrical properties were influenced by varying the doping concentration. Conductivity of thin films was found to increase as the doping concentrations increased. Also indicates in this paper the surface morphology of the thin film.

Keywords

II-VI semiconductors; doping profiles; electrical conductivity; field emission electron microscopy; scanning electron microscopy; semiconductor growth; semiconductor thin films; sol-gel processing; surface morphology; tin; wide band gap semiconductors; zinc compounds; FESEM; SiO₂; ZnO:Sn; current-voltage measurement; doping concentrations; electrical conductivity; electrical properties; field emission scanning electron microscopy; glass substrates; sol-gel immersion method; structural properties; surface morphology; tin-doped zinc oxide thin film; Conductivity; Doping; Films; Morphology; Tin; Zinc oxide; conductivity; doping concentration; surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Technology Management and Emerging Technologies (ISTMET), 2014 International Symposium on

Conference_Location

Bandung

Print_ISBN

978-1-4799-3703-5

Type

conf

DOI

10.1109/ISTMET.2014.6936483

Filename

6936483