Optimization of Indirectly-Heated Type Microwave Power Sensors Based on GaAs Micromachining

Author

Wang, De Bo ; Liao, Xiao Ping ; Liu, Tong

Author_Institution

Key Lab. of MEMS of the Minist. of Educaiton, Southeast Univ., Nanjing, China

Volume

12

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1349

Lastpage

1355

Abstract

In this paper, the indirectly-heated type microwave power sensors based on GaAs micromachining are optimized to obtain a reasonable microstructure dimension and achieve the compatibility of miniaturization with high performance. The thermal properties and the microwave properties of microwave power sensors are researched. The fabrication is divided into a front side and a back side processing of GaAs. The matching characteristics and the sensitivity characteristics of microwave power sensors are measured. With a tradeoff consideration between the miniaturization and the high performance, a reasonable microstructure dimension of the microwave power sensor is obtained. This optimized power sensor has very good RF-dc linearity, and the response time is about 6 ms.

Keywords

gallium arsenide; micromachining; microsensors; microwave detectors; GaAs; RF-DC linearity; back side processing; front side processing; indirectly-heated type microwave power sensor optimization; matching characteristics; micromachining; microwave property; reasonable microstructure dimension; sensitivity characteristics; thermal property; Electromagnetic heating; Gallium arsenide; Resistors; Sensitivity; Sensor phenomena and characterization; Thermal sensors; GaAs micromachining; indirectly-heated type; optimization; power sensor;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2011.2170677

Filename

6035733