Structural and compositional control of the output wavelength of very high power 0.98 mu m GaInAs lasers for pumping fiber amplifiers

Author

Chen, T.R. ; Zhuang, Y.H. ; Marshall, W.K. ; Xu, Y.J. ; Yariv, A.

Author_Institution

Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

Volume

3

Issue

8

fYear

1991

Firstpage

694

Lastpage

696

Abstract

The authors report on the design, fabrication, and characterization of high-power strained-layer (SL) InGaAs single-quantum-well (SQW) lasers. The lasers emit a 0.980+or-0.002 mu m. They deliver over 100 mW CW optical power at room temperature in a stable single lateral mode with a beam divergence of 15 approximately=20 degrees . The maximum CW output power measured is 265 mW. The lasers have been successfully used as pump sources for an erbium-doped fiber amplifier.<>

Keywords

III-V semiconductors; fibre lasers; gallium arsenide; indium compounds; laser transitions; optical pumping; semiconductor junction lasers; 0.98 micron; 100 to 265 mW; CW optical power; Er doped fibre amplifier; GaInAs lasers; III-V semiconductor; SQW lasers; beam divergence; compositional control; design; fabrication; output wavelength; room temperature; stable single lateral mode; strained layer; structural control; very high power; Erbium-doped fiber lasers; Fiber lasers; High power amplifiers; Laser excitation; Laser modes; Optical control; Optical design; Optical fiber amplifiers; Power lasers; Pump lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84455

Filename

84455