• DocumentCode
    1341299
  • Title

    Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation

  • Author

    Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Ferlet-Cavrois, Véronique

  • Author_Institution
    DEI, Univ. di Padova, Padua, Italy
  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    2952
  • Lastpage
    2958
  • Abstract
    We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss retention and functional failures, analyzing the role of floating gate cells and peripheral circuitry, as compared to previous generations. We found that in these new devices, retention errors appear in all program levels. Guidelines on worst-case testing conditions are given.
  • Keywords
    NAND circuits; dosimetry; flash memories; logic gates; advanced multilevel NAND Flash memories; floating gate cells; peripheral circuitry; single-level NAND Flash memories; size 40 nm; total dose effects; total dose irradiation; Degradation; Flash memory; Nonvolatile memory; Flash memories; floating gate (FG) cells; non-volatile memories; total ionizing dose;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2222928
  • Filename
    6365394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341299