DocumentCode
1341320
Title
Plasma-induced charging evaluation using SCA and PDM tools
Author
Karzhavin, Yuri ; Lao, Keith Q. ; Wu, Wei ; Gelatos, Carol
Author_Institution
White Oak Semicond., Sandston, VA, USA
Volume
45
Issue
3
fYear
1998
fDate
3/1/1998 12:00:00 AM
Firstpage
753
Lastpage
755
Abstract
Plasma-induced charging has been characterized using unpatterned oxide wafer charging technique. Charging distributions correlate to gate oxide charging damage with antennae structure. Modification of the process by lowering pressure and increasing gas flow led to a significant decrease of the plasma-induced charging and the gate oxide damage
Keywords
integrated circuit manufacture; integrated circuit measurement; monitoring; plasma applications; sputter etching; surface charging; PDM tool; SCA tool; antennae structure; charging distributions; gate oxide charging damage; plasma-induced charging evaluation; unpatterned oxide wafer charging technique; Current measurement; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources; Surface charging; Thickness measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.661238
Filename
661238
Link To Document