Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

Experimental evidence confirming single-event transient generation from ion strikes directly into the drain region of an InAlSb/InAs/AlGaSb high electron mobility transistor is presented. A rectifying drain alloy-buffer layer interface is shown to be responsible for the generation of single-event transients far from the active regions of the device. Charge collection in these depletion-mode devices is maximum at threshold, decreasing in both depletion and accumulation. In depletion, direct recombination of radiation-generated electrons at the drain dominates charge collection. In accumulation, the electric field in the channel strongly influences charge collection. In threshold, both source-to-channel charge injection as well as the electric field in the channel are simultaneously high, resulting in more charge collection than depletion and accumulation.