Optically Self-Balanced InGaAs–InP Avalanche Photodiode for Infrared Single-Photon Detection

Author

Jian, Yi ; Wu, E. ; Wu, Guang ; Zeng, Heping

Author_Institution

State Key Lab. of Precision Spectrosc., East China Normal Univ., Shanghai, China

Volume

22

Issue

3

fYear

2010

Firstpage

173

Lastpage

175

Abstract

We demonstrated a robust noise cancellation by using an optical self-differential technique for the near-infrared single-photon detection based on an InGaAs-InP avalanche photodiode, which enabled 31-dB suppression of the spike noise, resulting in a detection efficiency of 22.4% with an afterpulse probability of 2.4% at the gating frequency of 25 MHz. This technique may provide a promising way for high-efficiency and low-noise fast detection of infrared single photons.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; optical noise; photodetectors; probability; semiconductor device noise; InGaAs-InP; afterpulse probability; detection efficiency; frequency 25 MHz; gating frequency; high-efficiency detection; infrared single-photon detection; low-noise detection; noise cancellation; optical self-differential technique; optically self-balanced avalanche photodiode; spike noise suppression; Avalanche photodiodes (APDs); photodetectors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2036941

Filename

5340674