• DocumentCode
    1341958
  • Title

    Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

  • Author

    Almuneau, G. ; Genty, F. ; Chusseau, L. ; Bertru, N. ; Fraisse, B. ; Jacquet, J.

  • Author_Institution
    Centre d´´Electron. et de Microelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    33
  • Issue
    14
  • fYear
    1997
  • fDate
    7/3/1997 12:00:00 AM
  • Firstpage
    1227
  • Lastpage
    1228
  • Abstract
    The first high reflectivity (R=97.7%) Al0.3Ga0.7 As0.5Sb0.5/AlAs0.59Sb0.41 Bragg mirror lattice matched to InP was obtained at 1.28 μm by solid source molecular beam epitaxy. This result was achieved with only 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreement
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; molecular beam epitaxial growth; optical fabrication; reflectivity; 1.3 micron; Al0.3Ga0.7As0.5Sb0.5 -AlAs0.59Sb0.41; InP; InP substrate; high-reflectivity AlGaAsSb/AlAsSb Bragg mirror; lattice matched layer; solid source molecular beam epitaxy growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970830
  • Filename
    603586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341958