Metal-semiconductor-metal demultiplexing waveguide photodetectors in InGaAs/GaAs quantum well structures by selective bandgap tuning

Author

Choudhury, A. N M Masum ; Melman, P. ; Silletti, A. ; Koteles, Emil S. ; Foley, B. ; Elman, B.

Author_Institution

GTE Lab. Inc., Waltham, MA, USA

Volume

3

Issue

9

fYear

1991

Firstpage

817

Lastpage

820

Abstract

A two-wavelength demultiplexing metal-semiconductor-metal (MSM) waveguide photodetector has been fabricated using impurity-free vacancy diffusion and partial intermixing of an InGaAs/GaAs strained layer quantum well structure. The importance of growth and process parameters, such as aluminium composition in the cladding layer and the oxygen plasma treatment of the sample during processing, on the related device performance is discussed. This photodetector is a potential candidate for monolithic integration with other optoelectronic devices.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; multiplexing equipment; optical communication equipment; optical waveguides; photodetectors; semiconductor quantum wells; InGaAs-GaAs; O; cladding layer; demultiplexing waveguide photodetectors; device performance; impurity-free vacancy diffusion; metal-semiconductor-metal; monolithic integration; optoelectronic devices; oxygen plasma treatment; partial intermixing; quantum well structures; selective bandgap tuning; strained layer; two-wavelength; Aluminum; Demultiplexing; Gallium arsenide; Indium gallium arsenide; Photodetectors; Photonic band gap; Plasma devices; Plasma materials processing; Plasma waves; Waveguide components;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84504

Filename

84504