DocumentCode
1342206
Title
A balanced distributed preamplifier using MMIC GaAs MESFET technology
Author
Nguyen, T.L. ; Freundorfer, A.P.
Author_Institution
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
Volume
9
Issue
4
fYear
1997
fDate
4/1/1997 12:00:00 AM
Firstpage
499
Lastpage
501
Abstract
A MMIC balanced preamplifier was fabricated using a 0.8-μm gate length process. A 45-dB/spl Omega/ transimpedance gain, a 6-GHz bandwidth, a 10-pa//spl radic/(Hz)input noise and a 12-dB CMRR were measured.
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; circuit noise; electro-optical modulation; frequency shift keying; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical receivers; preamplifiers; /spl mu/m gate length process; 0.8 mum; 6 GHz; GaAs; MMIC GaAs MESFET technology; MMIC balanced preamplifier; balanced distributed preamplifier; transimpedance gain; Bandwidth; Circuit noise; Gallium arsenide; Low-frequency noise; MESFETs; MMICs; Optical noise; Optical receivers; Photodiodes; Preamplifiers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.559401
Filename
559401
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