A Statistical Approach to Microdose Induced Degradation in FinFET Devices

Author

Griffoni, Alessio ; Gerardin, Simone ; Roussel, Philippe J. ; Degraeve, Robin ; Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Simoen, Eddy ; Claeys, Cor

Author_Institution

IMEC, Leuven, Belgium

Volume

56

Issue

6

fYear

2009

Firstpage

3285

Lastpage

3292

Abstract

We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, LogNormal distribution, Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.

Keywords

MOSFET; Weibull distribution; ion beam effects; normal distribution; semiconductor device reliability; statistical analysis; FinFET Devices; Weibull distribution; heavy-ion strikes; log-normal distribution; microdose induced degradation; reliability distribution functions; statistical analysis; CMOS process; Degradation; Electric breakdown; FinFETs; Life estimation; Lifetime estimation; Radiation effects; Single event upset; Statistical analysis; Weibull distribution; FinFET; Weibull distribution; heavy-ion irradiation; microdose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033365

Filename

5341343