• DocumentCode
    1342282
  • Title

    Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 ^{\\circ}\\hbox {C} on a Flexible Substrate

  • Author

    Lee, Dong Hee ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

  • Author_Institution
    Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    32
  • Issue
    12
  • fYear
    2011
  • Firstpage
    1695
  • Lastpage
    1697
  • Abstract
    Diffusion-limited Schottky junctions were fabricated at 200°C by employing a top amorphous In-Ga-Zn-O (a-IGZO)/bottom Pt electrode structure. Those fabricated on glass exhibited rectification ratios of Ion/off >; 108 and ideality factors close to unity n = 1.04. The temperature dependence values of current-voltage characteristics were small and not explained by a simple thermionic emission theory; instead, a percolation model explains them with an average Schottky barrier height of 1.2 eV and its distribution width of 0.13 eV. Flexible a-IGZO/Pt Schottky junctions were also demonstrated on polyimide substrates with n = 1.2 and Ion/off >; 105.
  • Keywords
    Schottky barriers; amorphous semiconductors; flexible electronics; gallium compounds; indium compounds; platinum; semiconductor-metal boundaries; ternary semiconductors; InGaZnO-Pt; Schottky barrier; a-IGZO; amorphous oxide semiconductor; current-voltage characteristic; diffusion limited Schottky junction; flexible substrate; top amorphous electrode structure; Annealing; Electrodes; Resistance; Schottky barriers; Schottky diodes; Substrates; Amorphous indium–gallium–zinc–oxide (a-IGZO); Schottky diode; amorphous oxide semiconductor (AOS); flexible device;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2167123
  • Filename
    6035956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342282