Theoretical Model for Dicke Superradiance in a Semiconductor Laser Device

Author

Guo, Xuhan ; Williams, Kevin A. ; Olle, Vojtech ; Wonfor, Adrian ; Penty, Richard V. ; White, Ian H.

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge, UK

Volume

23

Issue

23

fYear

2011

Firstpage

1817

Lastpage

1819

Abstract

A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.

Keywords

high-speed optical techniques; laser beams; laser stability; semiconductor lasers; superradiance; Dicke superradiance; absorber length specification; diode lasers; electrode configuration; femtosecond pulse power; optical bandwidth; pulse stability; pulsewidth reductions; semiconductor laser device; spatially resolved absorber; spectral gain bandwidth; spectrally resolved gain; travelling wave method; Bandwidth; Cavity resonators; Laser theory; Mathematical model; Semiconductor lasers; Spontaneous emission; Strontium; Semiconductor device modeling; short pulse generation; spontaneous emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2169661

Filename

6035958