Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

Author

Arora, Rajan ; Rozen, John ; Fleetwood, Daniel M. ; Galloway, Kenneth F. ; Zhang, C. Xuan ; Han, Jisheng ; Dimitrijev, Sima ; Kong, Fred ; Feldman, Leonard C. ; Pantelides, Sokrates T. ; Schrimpf, Ronald D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci. (EECS), Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3185

Lastpage

3191

Abstract

Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO₂ gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.

Keywords

MOS capacitors; X-ray effects; electron traps; hole traps; interface states; nitridation; silicon compounds; wide band gap semiconductors; 3C-SiC substrate; 3C-based devices; 4H-SiC substrate; SiC; SiO₂ gate dielectrics; SiO₂-SiC; X-ray radiation effects; charge trapping properties; interface trap density; interface traps; interfacial nitrogen; ionizing radiation; nitridation process; nitrided gate oxides; silicon-carbide-based MOS capacitors; Astronomy; Dielectric substrates; Electron mobility; Electron traps; Ionizing radiation; MOS capacitors; Nitrogen; Physics; Silicon carbide; Thermal conductivity; 3C-SiC; 4H-SiC; ${rm N}_{2}{rm O}$; MOS; NO; POA;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2031604

Filename

5341380