Investigation of the Energy Response of RADFET for High Energy Photons, Electrons, Protons, and Neutrons

Author

Wind, Michael ; Beck, Peter ; Jaksic, Aleksandar

Author_Institution

Austrian Inst. of Technol. (AIT), Seibersdorf, Austria

Volume

56

Issue

6

fYear

2009

Firstpage

3387

Lastpage

3392

Abstract

We investigate the energy response of RADFET to high energy photons, electrons, protons and neutrons with FLUKA Monte Carlo simulation code. We combine Monte Carlo and device simulations to describe radiation effects in the RADFET gate oxide due to photon and proton exposure. Comparisons with photon irradiation measurements show reasonable agreement.

Keywords

Monte Carlo methods; dosimeters; electron beam effects; ion beam effects; neutron effects; neutron transport theory; FLUKA Monte Carlo simulation code; RADFET gate oxide; dosimeters; electron radiation; neutron radiation fields; neutron transport; photon irradiation; proton irradiation; radiation sensing field effect transistor; Atomic measurements; Electrons; Geometry; Monte Carlo methods; Neutrons; Optoelectronic and photonic sensors; Packaging; Protons; Silicon; Solid modeling; Energy deposition and dosimetry; FLUKA Monte Carlo high energy particle transport simulation; RADFET; TCAD device simulation; radiation transport; total ionizing effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033060

Filename

5341393