Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power

Author

Casey, Megan C. ; Armstrong, Sarah E. ; Arora, Rajan ; King, Michael P. ; Ahlbin, Jonathan R. ; Francis, S. Ashley ; Bhuva, Bharat L. ; McMorrow, Dale ; Hughes, Harold L. ; McMarr, Patrick J. ; Melinger, Joseph S. ; Massengill, Lloyd W.

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3262

Lastpage

3266

Abstract

Total ionizing dose experiments showed an increase in operating frequency (and therefore, power consumption) in bulk CMOS ring oscillators when operated at ultra-low power supply voltages. Combined-environment experiments showed the single-event susceptibility of ULP circuits increases with total dose exposure. To operate ULP circuits in a total dose environment and ensure there is little change in their circuit characteristics, the supply voltage should be greater than 400 mV.

Keywords

CMOS integrated circuits; X-ray effects; low-power electronics; oscillators; X-ray irradiation; bulk CMOS ring oscillators; power consumption; single-event susceptibility; size 130 nm; total ionizing dose; ultralow power circuits; ultralow power supply voltages; CMOS technology; Cranes; Energy consumption; Frequency; Integrated circuit technology; Power supplies; Radiation effects; Ring oscillators; Space technology; Threshold voltage; CMOS circuits; digital circuits; radiation effects; radiation effects in ICs; single-event charge collection; single-event effects; single-event transients; single-event upset; total dose effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033919

Filename

5341396