DocumentCode
1342676
Title
Error Instability in Floating Gate Flash Memories Exposed to TID
Author
Bagatin, Marta ; Gerardin, Simone ; Cellere, Giorgio ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, Mauro ; Beltrami, Silvia
Author_Institution
Dipt. di Ing. dellTnformazione, Univ. di Padova, Padova, Italy
Volume
56
Issue
6
fYear
2009
Firstpage
3267
Lastpage
3273
Abstract
We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash memories with both NAND and NOR architecture. We investigate the dependence of annealing on the program level, linking the reduction in the number of Floating Gate errors to the evolution of the threshold voltage of each single cell. To understand the underlying physics we also discuss how temperature affects the number of Floating Gate errors.
Keywords
annealing; flash memories; logic gates; NAND architecture; NOR architecture; TID; error instability; floating gate flash memories; post-radiation annealing; threshold voltage; Annealing; Flash memory; Joining processes; Nonvolatile memory; Physics; Protons; Solid state circuits; Temperature; Threshold voltage; X-rays; Flash memories; X-rays; protons; total dose effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2033364
Filename
5341401
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