DocumentCode
1342730
Title
Radiation Effects and Annealing Studies on Amorphous Silicon Solar Cells
Author
Srour, J.R. ; Palko, J.W. ; Lo, D.H. ; Liu, S.H. ; Mueller, R.L. ; Nocerino, J.C.
Author_Institution
Aerosp. Corp., Los Angeles, CA, USA
Volume
56
Issue
6
fYear
2009
Firstpage
3300
Lastpage
3306
Abstract
Results of radiation effects and annealing studies are presented for amorphous silicon solar cells from three manufacturers. Data scale well with ionizing dose in many cases for proton, x-ray, and electron irradiation. Significant long-term annealing occurs at room temperature. Results for small-area diodes are in reasonable agreement with findings for monolithic modules. Damage mechanisms in irradiated and illuminated devices are compared.
Keywords
amorphous semiconductors; annealing; electron beam effects; elemental semiconductors; proton effects; silicon; solar cells; Si; X-ray irradiation; amorphous silicon solar cells; annealing; electron irradiation; monolithic modules; proton irradiation; radiation effects; temperature 293 K to 298 K; Amorphous silicon; Annealing; Degradation; Electrons; Laboratories; Manufacturing; Photovoltaic cells; Protons; Radiation effects; Temperature; Amorphous silicon; annealing; radiation effects; solar cells;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2034329
Filename
5341409
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