The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices

Author

Boch, Jérôme ; Velo, Yago Gonzalez ; Saigné, Frédéric ; Roche, Nicolas J H ; Schrimpf, Ronald D. ; Vaillé, Jean-Roch ; Dusseau, Laurent ; Chatry, Christian ; Lorfèvre, Eric ; Ecoffet, Robert ; Touboul, Antoine D.

Author_Institution

IES, Univ. Montpellier 2, Montpellier, France

Volume

56

Issue

6

fYear

2009

Firstpage

3347

Lastpage

3353

Abstract

The enhanced radiation sensitivity exhibited at low dose rate by many bipolar devices remains one of the main concerns for spacecraft reliability. As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.

Keywords

avionics; bipolar transistors; life testing; radiation hardening (electronics); semiconductor device testing; accelerated test technique; bipolar devices; bipolar transistors; dose-rate switching technique; radiation sensitivity; spacecraft reliability; Circuit testing; Degradation; Guidelines; Integrated circuit reliability; Integrated circuit testing; Life estimation; Qualifications; Space vehicles; Switching circuits; Temperature; Accelerated test method; dose rate; integrated circuits; switching experiments; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033686

Filename

5341412