• DocumentCode
    1343124
  • Title

    Fabrication of submicrometre 3D periodic structures composed of Si/SiO2

  • Author

    Kawakami, S.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Miyagi, Japan
  • Volume
    33
  • Issue
    14
  • fYear
    1997
  • fDate
    7/3/1997 12:00:00 AM
  • Firstpage
    1260
  • Lastpage
    1261
  • Abstract
    The successful fabrication of 3D periodic structures composed of two transparent materials in the submicrometre range is reported for the first time. The material system comprises a-Si (n=3.26) and SiO2 (n=1.46), and sputter-etching leads to `high-fidelity´ layer-to-layer propagation of a concave-convex pattern
  • Keywords
    amorphous semiconductors; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; sputter etching; Si-SiO2; Si/SiO2; amorphous Si; concave-convex pattern; fabrication; sputter-etching; submicron 3D periodic structures; transparent materials;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970844
  • Filename
    603608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1343124