DocumentCode
1343193
Title
Influence of external circuits on filamentary current flow during impurity breakdown in n-type GaAs
Author
Kunihiro, K. ; Gaa, M. ; Schöll, E.
Author_Institution
Inst. fur Theor. Phys., Tech. Univ. Berlin, Germany
Volume
33
Issue
14
fYear
1997
fDate
7/3/1997 12:00:00 AM
Firstpage
1261
Lastpage
1263
Abstract
Two-dimensional simulations are performed of low-temperature impurity breakdown in an n-type GaAs film connected to a capacitive and resistive external circuit under current controlled conditions. The results confirm that the transition between nearly insulating and highly-conductive states. Where a current filament is formed or decays in the sample, is synchronised with the charging and discharging of a parallel capacitor. Our simulations also indicate a mechanism for self-sustained relaxation oscillations
Keywords
III-V semiconductors; carrier density; electric breakdown; electrical conductivity transitions; gallium arsenide; impurities; oscillations; relaxation; semiconductor thin films; GaAs; capacitor charging; capacitor discharging; current controlled conditions; external circuit influence; filamentary current flow; low-temperature impurity breakdown; n-type GaAs film; parallel capacitor; self-sustained relaxation oscillations; two-dimensional simulations; voltage oscillations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970849
Filename
603609
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