Electrical Characterization of Photoconductive GaN Nanowires from 50 MHz to 33 GHz

Author

Wallis, T. Mitch ; Gu, Dazhen ; Imtiaz, Atif ; Smith, Christopher S. ; Chiang, Chin-Jen ; Kabos, Pavel ; Blanchard, Paul T. ; Sanford, Norman A. ; Bertness, Kris A.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

10

Issue

4

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

832

Lastpage

838

Abstract

The electrical response of two-port photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of the nanowire devices showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. Two different two-port microwave network models were used to extract microwave circuit parameters in the photoconductive and dark states. After illumination, the GaN nanowire devices showed a measurable increase in shunt capacitance and decreases in both the contact and nanowire resistances.

Keywords

III-V semiconductors; contact resistance; dark conductivity; gallium compounds; nanoelectromechanical devices; nanowires; photocapacitance; photoconducting devices; photoconductivity; semiconductor device models; wide band gap semiconductors; GaN; contact resistance; dark states; electrical admittance; electrical properties; frequency 50 GHz to 33 GHz; microwave circuit parameters; nanowire devices; photoconductive states; shunt capacitance; two-port microwave network models; two-port photoconductive nanowires; ultraviolet illumination; Admittance; Capacitance; Coplanar waveguides; Electrical resistance measurement; Gallium nitride; Nanowires; Transmission line measurements; Microwave measurements; nanotechnology; nanowires; photoconductivity; semiconductor devices;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2084588

Filename

5595008