21-dB gain ultra-wideband complementary metal-oxide semiconductor low-noise amplifier with current-reuse technique

Author

Ham, J.-H. ; Lee, Joon-Yeong ; Yun, Tae-Yeoul

Author_Institution

Dept. of Electr. & Comput. Eng., Hanyang Univ., Seoul, South Korea

Volume

5

Issue

12

fYear

2011

Firstpage

1495

Lastpage

1501

Abstract

A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is proposed. The current-reuse technique adopted at the first stage yields an exceptionally high gain due to the summation of n-type metal-oxide semiconductor (MOS) and p-type MOS transconductances, showing wide input matching with the aid of source inductors and load effects. The proposed LNA achieves better than 10-dB input return loss from 3.0 to 9.2-GHz, a minimum noise figure of 2.9-dB, a maximum power gain of 21-dB, a gain-bandwidth product of 554-GHz and a figure of merit of 31.8-GHz/mW while consuming 12.8-mW from 7.1-mA and 1.8-V. The proposed LNA is fabricated using a 0.18-μm complementary MOS process.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; ultra wideband technology; LNA; MOS process; current-reuse technique; frequency 5.54 GHz; high-gain low-noise amplifier; load effect; noise figure 2.9 dB; noise figure 21 dB; p-type MOS transconductance; power 12.8 mW; size 0.18 mum; source inductor; ultra-wideband complementary metal-oxide semiconductor; wideband low-noise amplifier;

fLanguage

English

Journal_Title

Microwaves, Antennas & Propagation, IET

Publisher

iet

ISSN

1751-8725

Type

jour

DOI

10.1049/iet-map.2010.0438

Filename

6036226