• DocumentCode
    1344554
  • Title

    Characterization of the PbI2 crystal as a material for radiation detectors

  • Author

    Shoji, T. ; Sakamoto, K. ; Ohba, K. ; Suehiro, T. ; Hiratate, Y.

  • Author_Institution
    Tohoku Inst. of Technol., Sendai, Japan
  • Volume
    44
  • Issue
    3
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    451
  • Lastpage
    454
  • Abstract
    We have been studying a radiation detector which uses lead iodide crystal. The growth of PbI2 crystal used the two methods. One is the zone melting method and the other is the vapor phase epitaxy method. The performance of the detector fabricated from a crystal grown by the former method showed better characteristics than the detector fabricated from the crystal grown by the latter. Results of XPS and PL measurements, suggest that the behavior of the iodine atoms in the crystal influenced and controlled the performance of the detector
  • Keywords
    X-ray photoelectron spectra; lead compounds; photoluminescence; semiconductor counters; vapour phase epitaxial growth; wide band gap semiconductors; zone melting; PbI2; PbI2 crystal; radiation detectors; vapor phase epitaxy method; zone melting method; Art; Atomic layer deposition; Crystalline materials; Electrons; Etching; Lattices; Lead; Photomultipliers; Radiation detectors; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.603689
  • Filename
    603689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1344554