A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

Author

Chan, Mansun ; Hui, Kelvin Y. ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

834

Lastpage

841

Abstract

A new non-quasi-static (NQS) MOSFET model, which is applicable for both large-signal transient and small-signal ac analysis, has been developed. It employs a physical relaxation time approach to take care of the finite channel charging time to reach equilibrium and the effect of instantaneous channel charge re-distribution. The NQS model is formulated independently from the dc I-V and the charge-capacitor model, thus can be easily applied to any existing simulators. The model has been implemented in the newly released BSIM3 version 3, and comparison has been made among this model, common quasi-static (QS) SPICE models and PISCES two-dimensional (2-D) numerical device simulator. While predicting accurate NQS behavior, the time penalty for using the new model is only about 20-30% more than the common QS models. It is much less than the time required by other NQS models reported. Limitations and compromises between simplicity, efficiency and accuracy are also discussed

Keywords

MOSFET; circuit analysis computing; semiconductor device models; transient analysis; AC small-signal model; BSIM3 nonquasi-static transient model; DC I-V model; MOSFET; NQS model; channel charging; charge-capacitor model; circuit simulation; relaxation time; Circuit simulation; Computational modeling; Equivalent circuits; MOSFET circuits; Numerical models; Numerical simulation; Predictive models; Robustness; SPICE; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662788

Filename

662788