Technology and characterization of diamond field emitter structures

Author

Hong, Dongsung ; Aslam, Dean M.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

977

Lastpage

985

Abstract

In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp³/sp² ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron-doped polycrystalline diamond films with low sp³/sp² ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields. Electric fields to initiate emission, measured at J=0.01 mAcm^-2, are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions. The results of this study have important consequences for diamond triode field emitter displays

Keywords

boron; current density; diamond; display devices; doping profiles; electric fields; electron field emission; elemental semiconductors; grain boundaries; grain size; semiconductor thin films; vacuum microelectronics; B-doped polycrystalline diamond films; C:B; anode to emitter separation; characterization; diamond field emitter structures; diamond film technology; doping level; electric fields; field enhancement; grain boundaries; grain size; grain tips; high current densities; low emission fields; patterning; triode field emitter displays; Anodes; Chemical vapor deposition; Current density; Doping; Electron emission; Flat panel displays; Grain boundaries; Grain size; Integrated circuit technology; Semiconductor films;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662815

Filename

662815