Development of Reactive-Ion Etching for ZnO-Based Nanodevices

Author

Lee, Kin Kiong ; Luo, Yi ; Lu, Xiaofeng ; Bao, Peng ; Song, Aimin M.

Author_Institution

Univ. of Manchester, Manchester, UK

Volume

10

Issue

4

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

839

Lastpage

843

Abstract

We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is commonly used as an etching mask in nanolithography. We also show the feasibility of fabricating nanofeatures patterned onto a thin layer (<;200 nm) of PMMA by nanoimprint technique and electron -beam lithography with the optimized RIE process parameters. Finally, planar nanodevices including self-switching diodes and side-gate transistors were successfully fabricated.

Keywords

II-VI semiconductors; electron beam lithography; masks; nanoelectromechanical devices; nanofabrication; nanolithography; nanostructured materials; semiconductor diodes; soft lithography; sputter etching; transistors; wide band gap semiconductors; zinc compounds; ZnO; ZnO-based nanodevices; electron-beam lithography; etching mask; hydrogen gas; methane gas; nanoimprint technique; nanolithography; optimized RIE process parameters; planar nanodevices; poly(methyl methacrylate) thin layer; reactive-ion etching conditions; self-switching diodes; side-gate transistors; zinc oxide films; Etching; Fabrication; Materials; Nanoscale devices; Plasmas; Zinc oxide; Nanoimprint technique; reactive-ion etching (RIE); semiconductor device fabrication; zinc oxide devices (ZnO);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2085013

Filename

5597950