Loop Enhanced Passive Source- and Load-Pull Technique for High Reflection Factor Synthesis

Author

Ghannouchi, Fadhel M. ; Hashmi, Mohammad S. ; Bensmida, Souheil ; Helaoui, Mohamed

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

Volume

58

Issue

11

fYear

2010

Firstpage

2952

Lastpage

2959

Abstract

An original source- and load-pull topology based on a passive technique is presented in this paper. The proposed system consists of passive tuners and loop structures. The use of a passive loop structure in cascade with a passive tuner allows for synthesis of reflection coefficients in the order of 0.97 magnitudes at the device under test´s access plane. The measurement and characterization results of a 1W GaAs MESFET device show an improvement of 0.9 dB in the gain and 6% in the power-added efficiency when the proposed impedance synthesis techniques are used.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; network synthesis; power amplifiers; GaAs; GaAs MESFET device; high reflection factor synthesis; impedance synthesis technique; load-pull technique; loop enhanced passive source; passive loop structure; passive tuner; power 1 W; reflection coefficient; Calibration; Circulators; Gain; Impedance; Power generation; Topology; Tuners; Load-pull; passive loop; reflection coefficient; source-pull; tuner;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2077990

Filename

5597960