Analysis and Design of Hanle-Effect Spin Transistors at 300 K

We propose a new Hanle-effect device based on a MOSFET type of spin transistor to reveal the dynamics of spin-polarized electron transport in the Si MOS inversion channel. The proposed device has the ability to detect spin signals with high sensitivity and to distinguish spin transport signals from other, spurious signals. Spin transport behavior induced by the Hanle effect in the device were theoretically analyzed and were well correlated with the universality of electron mobility in the MOS inversion channel. The Hanle-effect spin device can elucidate the true nature of spin transport in Si MOS inversion channels.