Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics

Author

Winston, David W. ; Hayes, Russell E.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

34

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

707

Lastpage

715

Abstract

This paper presents a simulation analysis of distributed Bragg reflectors (DBRs) and their affect on the characteristics of vertical-cavity surface-emitting lasers (VCSELs). The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes present in VCSELs. This simulator is used to examine the electrical characteristics of some simple DBR designs. Due to the different transport characteristics of electrons and holes, these results will show that n-type DBR designs must be different than p-type designs in order to achieve the best operating characteristics for the overall laser. This analysis will demonstrate the improvement in the characteristics by comparing the simulation results of a standard VCSEL with the results of a VCSEL using improved DBR designs

Keywords

distributed Bragg reflector lasers; laser cavity resonators; laser theory; optical design techniques; semiconductor device models; semiconductor lasers; surface emitting lasers; Bragg reflectors; DBR designs; SimWindows semiconductor device simulator models; distributed Bragg reflectors; electrical characteristics; electrical processes; n-type DBR designs; operating characteristics; optical processes; optoelectronic device simulation; p-type designs; simulation analysis; surface-emitting laser characteristics; thermal processes; transport characteristics; vertical-cavity surface-emitting lasers; Analytical models; Distributed Bragg reflectors; Electron optics; Laser modes; Optical design; Optoelectronic devices; Semiconductor devices; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.663456

Filename

663456