• DocumentCode
    1346504
  • Title

    1/f noise considerations for the design and process optimization of piezoresistive cantilevers

  • Author

    Harkey, J.A. ; Kenny, Thomas W.

  • Author_Institution
    Dept. of Mech. Eng., Stanford Univ., CA, USA
  • Volume
    9
  • Issue
    2
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    235
  • Abstract
    Piezoresistive cantilevers are limited by two major noise sources: Johnson noise, which is independent of frequency, and conductance fluctuation noise, which has a 1/f spectrum. The 1/f fluctuations of piezoresistive cantilevers are shown to vary inversely with the total number of carriers in the piezoresistor, as formulated by Hooge in 1969. Therefore, while 1/f noise is reduced for large heavily doped cantilevers, sensitivity considerations favor thin lightly doped cantilevers. Balancing these conflicting constraints produces optima for many design and processing parameters. For a cantilever with specified spring constant and bandwidth requirements, optima are identified for the beam thickness and length, and it is shown that the legs should be between 1/3 and 2/3 of the total length with a doping depth that is 1/3 of the beam thickness. Additionally, an optimal doping concentration is identified as a function of the cantilever volume and the measurement bandwidth. Annealing reduces 1/f noise, but causes a loss in sensitivity due to dopant diffusion, and an optimal anneal is computed with a typical diffusion length 10/sup -8/ cm. The analysis, methods, and some of the conclusions of this paper are also applicable to other types of piezoresistive sensors.
  • Keywords
    1/f noise; annealing; diffusion; doping profiles; microsensors; piezoresistive devices; 1/f noise; annealing; bandwidth; design optimization; dopant diffusion; doping profile; integrated sensor; piezoresistive cantilever; process optimization; spring constant; Annealing; Bandwidth; Design optimization; Doping; Fluctuations; Frequency; Noise reduction; Piezoresistance; Process design; Structural beams;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.846703
  • Filename
    846703