Period doubling route to chaos in SiGe IMPATT diodes

Author

Suárez, Almudena ; Mediavilla, Angel ; Luy, Johann F.

Author_Institution

Dept. de Ingenieria de Commun., Cantabria Univ., Santander, Spain

Volume

8

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

170

Lastpage

172

Abstract

An instantaneous electric model for a SiGe IMPATT diode is calculated here from the physical quantities provided by the foundry. The model is used for the nonlinear simulation of IMPATT-based circuits, which are prone to instability. In this work, a bifurcation analysis is carried out in order to determine their dynamical response, as a function of any suitable parameter. The technique has been applied to the equivalent circuit of the reflection measurement system, from which the IMPATT immittance variation curves are usually determined. The bifurcation analysis allowed the detection of a period doubling route to chaos, in good agreement with the experimental observations

Keywords

Ge-Si alloys; IMPATT diodes; bifurcation; chaos; dynamic response; equivalent circuits; microwave diodes; negative resistance devices; semiconductor device models; semiconductor materials; stability; IMPATT immittance variation curves; IMPATT-based circuits; SiGe; SiGe IMPATT diodes; bifurcation analysis; dynamical response; equivalent circuit; instability; instantaneous electric model; nonlinear simulation; period doubling route to chaos; reflection measurement system; Bifurcation; Chaos; Equivalent circuits; Frequency conversion; Germanium silicon alloys; P-i-n diodes; Radio frequency; Semiconductor process modeling; Silicon germanium; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.663523

Filename

663523