A testing method and device for intrinsic stress measurement in wafer bumping process

Author

Guo, Yifan ; Mitchell, Dianne ; Sarihan, Vijay ; Lee, Tien-Yu Tom ; Zheng, Dawei

Author_Institution

Adv. Interconnect Syst. Labs., Motorola Semicond. Products Sector, Tempe, AZ, USA

Volume

23

Issue

2

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

388

Lastpage

392

Abstract

A novel concept and the related testing methodology of a sensing device is presented. This device is used to determine the local intrinsic stresses induced in wafer processes such as metallization and bumping. The sensing device is essentially a pressure sensor structure with a specified membrane thickness. This sensing wafer is put into the processes which are under investigation and is processed together with the production wafers. During the process, the membrane is deformed due to the process induced intrinsic stress. The membrane deformation is either monitored continuously or measured after each process step by an optical method. Intrinsic stresses are calculated from the measured membrane deformations

Keywords

deformation; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; light interferometry; membranes; microsensors; nickel; nonelectric sensing devices; process monitoring; production testing; silicon; stress measurement; MEMS; Ni plating process; Si; Si membrane deformation; Si membrane thickness; UBM reliability; intrinsic stress measurement; local intrinsic stresses; pressure sensor structure; process induced intrinsic stress; sensing device; sensing wafer; testing method; under bump metallisation; wafer bumping process; Biomembranes; Instruments; Optical films; Optical sensors; Residual stresses; Semiconductor thin films; Stress measurement; Testing; Transistors; X-ray diffraction;

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/6144.846779

Filename

846779