Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond

Author

Looi, Hui Jin ; Pang, Lisa Y.S. ; Wang, Yanyang ; Whitfield, Michael D. ; Jackman, Richard B

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

112

Lastpage

114

Abstract

Polycrystalline CVD diamond films with a near surface hydrogenated layer have been used to form the first normally off enhancement mode MESFET structures from this material. A room temperature transconductance of 0.14 mS/mm has been measured, the highest yet reported for a transistor structure made from polycrystalline material. The devices fully turn off, display saturation and have a low gate leakage current. Al forms a near ideal Schottky barrier on this material (SBH /spl sim/0.98 eV, ideality <1.1) and was used as the gate metallization within the MESFET. Optimized forms of these structures would appear to offer a commercially viable route to high-performance diamond based electronic circuits.

Keywords

Schottky barriers; Schottky gate field effect transistors; aluminium; diamond; elemental semiconductors; leakage currents; semiconductor device metallisation; semiconductor device reliability; semiconductor thin films; 0.98 eV; Al-C; enhancement mode metal-semiconductor field effect transistors; gate leakage current; gate metallization; near ideal Schottky barrier; near surface hydrogenated layer; normally off structures; polycrystalline diamond; room temperature transconductance; Displays; Electronic circuits; FETs; Inorganic materials; Leakage current; MESFETs; Metallization; Schottky barriers; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663531

Filename

663531