Submicron self-aligned HBT´s by selective emitter regrowth

Author

Park, S.H. ; Chin, T.P. ; Liu, Q.Z. ; Fu, S.L. ; Nakamura, T. ; Yu, P.K.L. ; Asbeck, P.M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

118

Lastpage

120

Abstract

Fabrication of fully self-aligned heterojunction bipolar transistors (HBTs) by selective emitter regrowth is described. Scaled devices with emitter dimensions as small as 0.4×7 μm² demonstrate current gain up to 29, with successful suppression of surface recombination effects. The RF characteristics of a 1.4×11 μm² device exhibited f_T and f_max of 75 and 46 GHz, respectively, and is limited by the refractory base metallization. This technology is promising for scaled HBT applications where high-speed and low-power dissipation are critical.

Keywords

UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device metallisation; semiconductor growth; surface recombination; vapour phase epitaxial growth; 0.4 micron; 1.4 micron; 46 GHz; 75 GHz; LP-MOVPE; current gain; emitter dimensions; high-speed devices; low-power dissipation; refractory base metallization; scaled HBT applications; selective emitter regrowth; self-aligned HBT; surface recombination effects; Circuits; Dry etching; Epitaxial growth; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Radio frequency; Substrates; Thermal management; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663533

Filename

663533