Microwave low-noise AlGaAs/InGaAs HBT´s with p/sup +/-regrown base contacts

Author

Dodo, H. ; Amamiya, Y. ; Niwa, T. ; Mamada, M. ; Goto, N. ; Shimawaki, H.

Author_Institution

Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

121

Lastpage

123

Abstract

This paper reports low-noise AlGaAs/InGaAs heterojunction bipolar transistors (HBT´s) with p/sup +/-regrown base contacts. To reduce the thermal and shot noises, we have reduced R/sub B/ by using a p/sup +/-regrown base contact and have reduced /spl tau//sub B/ by using a compositionally-graded thin base layer. As a result, F/sub min/ values of 0.9, 1.1, 1.2, and 1.6 dB were obtained at 2, 6, 12, and 18 GHz, respectively. These low-noise characteristics of our HBT´s show high potential for low-noise application.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device noise; shot noise; thermal noise; 2 to 18 GHz; AlGaAs-InGaAs; compositionally-graded thin base layer; microwave low-noise HBT; p/sup +/-regrown base contacts; shot noise; thermal noise; Bipolar transistors; Circuit noise; Heterojunction bipolar transistors; High power amplifiers; Indium gallium arsenide; Low-noise amplifiers; Microwave amplifiers; Noise reduction; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663534

Filename

663534