Channel length independent subthreshold characteristics in submicron MOSFETs

Author

Shin, H.S. ; Lee, C. ; Hwang, S.W. ; Park, B.G. ; Park, Y.J. ; Min, H.S.

Author_Institution

Dept. of Electron. Eng., Ewha Woman´´s Univ., Seoul, South Korea

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

137

Lastpage

139

Abstract

This work reports an anomalous subthreshold characteristic of the MOSFET for the first time. It is observed that the subthreshold characteristic does not change as the channel length decreases. The cause of channel length independent subthreshold characteristics is identified as the localized pileup of channel dopants near the source and drain ends of the channel. The low surface potential of this pileup region limits the subthreshold current of MOSFET. As a result, the ratio of on-current to off-current for this MOSFET increases as the channel length is reduced, which is an important parameter for low-voltage operation. It is found that a MOSFET with channel length independent subthreshold characteristic is more suitable for low-voltage operation.

Keywords

MOSFET; doping profiles; impurity distribution; surface potential; LV operation; anomalous subthreshold characteristic; channel dopants; channel length independent characteristics; localized pileup; low-voltage operation; submicron MOSFET; surface potential; Boron; Doping profiles; Furnaces; Implants; Ion implantation; Length measurement; MOSFET circuits; Maintenance engineering; Subthreshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663539

Filename

663539