• DocumentCode
    1347679
  • Title

    Epitaxial liftoff of AlAs/GaAs double barrier resonant tunnelling diodes

  • Author

    Tsao, A.J. ; Reddy, Viswanath K. ; Neikirk, D.P.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    3/14/1991 12:00:00 AM
  • Firstpage
    484
  • Lastpage
    486
  • Abstract
    For the first time, the successful removal of AlAs/GaAs double barrier resonant tunnelling diodes from the substrate using the epitaxial liftoff technique is reported. Ohmic contacts were formed to the top and bottom of the devices, using indium-alloyed ohmic contacts for the backside of the lifted-off diodes. Room temperature peak-to-valley ratios of 3.4 with peak current densities of 50 kA/cm2 were obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; ohmic contacts; semiconductor technology; tunnel diodes; AlAs-GaAs; double barrier resonant tunnelling diodes; epitaxial liftoff technique; lifted-off diodes; ohmic contacts; peak current densities; peak-to-valley ratios; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910305
  • Filename
    84718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1347679